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Integrated thin film resistor
capacitor diode network termination products are built on silicon
substrates. USI's thin film resistors, capacitors and diodes are
fabricated using proprietary, state-of-the-art thin film technology that
offers high performance at very high frequencies in compact QSOP or flip
chip assemblies, making them ideal for portable, wireless, compact and
high performance end products. These include pure resistor networks,
resistor capacitor diode networks with transistor/mosfet arrays,
Schottky diodes, network terminations including customized circuits with
transistors for specific applications. |
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The great advantage with this
process and these products is that all electrical devices have uniform
values and tolerances unlike discrete devices. This reduces
manufacturing cost and inventory greatly.
These networks are ideal for high
speed / frequency data and communication applications, providing
excellent performance, minimizing space and cost. Integrated thin film
resistor capacitor diode network processes improve reliability,
electrical and mechanical stability and performance at higher
frequencies when compared to traditional thick film networks.
Superior performance and
reliability is achieved through advanced semiconductor processing
techniques that ensure highly uniform thin film material. All products
are available in wide and narrow body SOIC, QSOP, TSSOP, Solder bumps
and die pack packages. (Tape and Reel)
Thin film nitride depositions are
available with LPCVD and PECVD thick nesses from a few hundred Angstroms
to several Microns.
While we have standard devices
(listed below) Resistor Capacitor values and the circuitry structure can
be tailored to meet individual customer requirements. |
Copyright © Universal Semiconductor
1925 Zanker Road, San Jose, CA 95112
Updated:
05/20/2008 |
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