MICRO – OPTICS I

UNIVERSAL SEMICONDUCTOR

MICRO – OPTICS I

USI PHOTONICS provides a state of the art solution for all your needs in the various Design, Prototyping and Production phases of your Micro – Optical Elements

USI Photonics provides extensive design and simulation capabilities to its customer; for thier specific needs. we use custom micro-optics design, simulation as well as EDA tools which have been optimizzed for the specific needs of micro-optics (Refractive, Diffractive, Holographic or Waveguide.)

Prototyping of micro-optics is done at USI's micro-optics fab facilities located in San Jose, California, on silicon, fused silica, quartz or other wafer materials.

Production line can provide customers with small runs of up to several thousand replicas on wafers. Larger quantities, in millions of units, can be obtained by plastic injection molding or plastic UV or hot embossing which USI also proposes as an add on to its foundry services.

Available Turnkey Processes. USI can provide the state of the art lithographic fabrication techniques, both in Si and Quartz wafers, such as:

Binary and Multilevel phase relief. (2,4,8, and 16 levels).
Grey Scale masking process. (Analog surface relief).
Resist reflow process (Micro-Refractive profiles).

MICRO-FABRICATION PROCESSES

Fabrication Step	Process	Dimension	Specifications			Comments
Fabrication Step	Process	Dimension	Min	Max	Typical	Comments
Wafers	Quartz	4 and 6 inch Wafers, Standard Thickness
	Silicon	4 and 6 inch wafers, all types of Silicon
	Fused Silica	4 and 6 inch wafers. UV grade fused silica or standard grade.
Mask Patterning	Critical Dim.	μm	0.35	-	1.35	Smallest Feature 1X
	Fracture Grid	nm	50	250	100	Custom Fracture Grid
	Intensity Levels	-	2	256	2	Binary Cr / grey scale masking.
	Mask Size	Inches	2	9	5	Standard / Custom
	Mask Thickness	milli-inches	90	250	125	Standard / Custom
Optical Lithography	Reduction Factor	-	1	5	1	Mask Aligner/Stepper
	Resolution	μm	0.35	-	1.25	Positive / Negative Resist
	Alignment Accuracy	nm	50	500	250	Custom alignment features.
	Size of batch	-	1	25	20	Wafer Batch
Etching	Metal Etch	μm (lateral res)	0.3	-	1.25	Cr, Al, Au
	HF Etch	nm (depth)	0.01	500.0	5.0	Quartz or Si etch.
	Dry RIE Si	μm(depth)	0.01	10.0	0.5	Si wafer O2
	Dry RIE Q	μm(depth)	0.01	5.0	0.6	Quartz etch CHF3
	Other	Plasma and Wet etching of metal, silicon, poly, nitride, oxide. RIE etching of metal, silicon, nitride and oxide
Coating/Deposition / doping	Metal Coat	A (thickness)	100	50,000	3000	Cr, Al, Au.
	Deposition	Vapox low temperature oxide glassivtion - SiO2
	Metal Dep	Al - Si 1% and pure Al
	Doping	Boron, POCl3
Diffusion	Twenty four furnaces for thin film, CMOS and bipolar and other processes. (Oxidation furnaces (Trans LC), Nitride deposition, LTO doped and undoped.
Dicing	Any substrate	Die Size in mm	0.05	-	5.0	Diamond dicing.
Packaging	Shipping	Gel packs, spring loaded wafer holders.

MICRO OPTICS II

1925 Zanker Road, San Jose, CA 95112 Updated: 04/01/2009