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MICRO – OPTICS I
USI PHOTONICS provides a state of the art solution for all your needs in the
various Design, Prototyping and Production phases of your Micro – Optical
Elements

USI Photonics provides extensive design
and simulation capabilities to its customer; for thier specific needs. we use
custom micro-optics design, simulation as well as EDA tools which have been
optimizzed for the specific needs of micro-optics (Refractive, Diffractive,
Holographic or Waveguide.)

Prototyping of micro-optics is done at
USI's micro-optics fab facilities located in San Jose, California, on silicon,
fused silica, quartz or other wafer materials.

Production line can provide customers
with small runs of up to several thousand replicas on wafers. Larger quantities,
in millions of units, can be obtained by plastic injection molding or plastic UV
or hot embossing which USI also proposes as an add on to its foundry services.
Available Turnkey Processes. USI can
provide the state of the art lithographic fabrication techniques, both in Si and
Quartz wafers, such as:
- Binary and Multilevel phase
relief. (2,4,8, and 16 levels).
- Grey Scale masking process. (Analog
surface relief).
- Resist reflow process
(Micro-Refractive profiles).
MICRO-FABRICATION
PROCESSES
Fabrication Step |
Process |
Dimension |
Specifications |
Comments |
Min |
Max |
Typical |
Wafers |
Quartz |
4 and 6 inch Wafers, Standard
Thickness |
Silicon |
4 and 6 inch wafers, all types of
Silicon |
Fused Silica |
4 and 6 inch wafers. UV grade
fused silica or standard grade. |
Mask
Patterning |
Critical Dim. |
μm |
0.35 |
- |
1.35 |
Smallest Feature 1X |
Fracture Grid |
nm |
50 |
250 |
100 |
Custom Fracture Grid |
Intensity Levels |
- |
2 |
256 |
2 |
Binary Cr / grey scale masking. |
Mask Size |
Inches |
2 |
9 |
5 |
Standard / Custom |
Mask Thickness |
milli-inches |
90 |
250 |
125 |
Standard / Custom |
Optical Lithography |
Reduction Factor |
- |
1 |
5 |
1 |
Mask Aligner/Stepper |
Resolution |
μm |
0.35 |
- |
1.25 |
Positive / Negative Resist |
Alignment Accuracy |
nm |
50 |
500 |
250 |
Custom alignment features. |
Size of batch |
- |
1 |
25 |
20 |
Wafer Batch |
Etching |
Metal Etch |
μm (lateral res) |
0.3 |
- |
1.25 |
Cr, Al, Au |
HF Etch |
nm (depth) |
0.01 |
500.0 |
5.0 |
Quartz or Si etch. |
Dry RIE Si |
μm(depth) |
0.01 |
10.0 |
0.5 |
Si wafer O2 |
Dry RIE Q |
μm(depth) |
0.01 |
5.0 |
0.6 |
Quartz etch CHF3 |
Other |
Plasma and Wet
etching of metal, silicon, poly, nitride, oxide. RIE etching of metal,
silicon, nitride and oxide |
Coating/Deposition / doping |
Metal Coat |
A (thickness) |
100 |
50,000 |
3000 |
Cr, Al, Au. |
Deposition |
Vapox low temperature
oxide glassivtion - SiO2 |
Metal Dep |
Al - Si 1% and pure
Al |
Doping |
Boron, POCl3 |
Diffusion |
Twenty four furnaces
for thin film, CMOS and bipolar and other processes. (Oxidation furnaces
(Trans LC), Nitride deposition, LTO doped and undoped. |
Dicing |
Any substrate |
Die Size in mm |
0.05 |
- |
5.0 |
Diamond dicing. |
Packaging |
Shipping |
Gel packs, spring
loaded wafer holders. |
Copyright © Universal Semiconductor
1925 Zanker Road, San Jose, CA 95112
Updated:
04/01/2009 |
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